Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory

Solid-State Electronics

Volumn 52, Issue 10, 2008, Pages 1536-1541

  Pavel, Akeed A ^a   Khan, Mehjabeen A ^a   Kirawanich, Phumin ^a   Islam, N E ^a  

^a University of Missouri   (United States)

Author keywords

Flash memory; High dielectric; Metal nanocrystal; Tunneling

Indexed keywords

CONDUCTION BANDS; DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRON TUNNELING; EXCAVATION; HEAT CONDUCTION; HETEROJUNCTIONS; METALS; MODEL STRUCTURES; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; QUANTUM CHEMISTRY; SILVER; SPEED; STRUCTURAL METALS; TUNNELING (EXCAVATION); WORK FUNCTION;

CHARGE TRANSPORTING; CONDUCTION BAND OFFSET; DATA-RETENTION; EMBEDDED METAL; FLOATING GATE; HIGH WORK FUNCTION; MEMORY CELLS; MEMORY STRUCTURES; METAL NANO-PARTICLES; METAL NANOCRYSTAL; METAL WORK FUNCTIONS; NANO-SCALED STRUCTURES; QUANTUM MECHANICAL TUNNELLING; RETENTION TIME; SILVER (AG); SIMULATION RESULTS; TRANSMISSION-LINE THEORY; TUNNELING; TUNNELING CURRENTS; WAVE IMPEDANCES;

FLASH MEMORY;

EID: 50849137148     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.028     Document Type: Article

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