Epitaxial Bi(111) films on Si(001): Strain state, surface morphology, and defect structure

Thin Solid Films

Volumn 516, Issue 23, 2008, Pages 8227-8231

  Hattab, H ^a   Zubkov, E ^a   Bernhart, A ^a   Jnawali, G ^a   Bobisch, C ^a   Krenzer, B ^a   Acet, M ^a   Moller R ^a   Horn von Hoegen, M ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Bismuth; Defects; Low energy electron diffraction; Scanning tunneling microscopy; Surface roughness; X ray diffraction

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; BISMUTH; BISMUTH PLATING; CONSERVATION; CRYSTAL GROWTH; DEFECT DENSITY; DEFECT STRUCTURES; DIFFRACTION; ELECTRON DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; IMAGING TECHNIQUES; MICROSCOPIC EXAMINATION; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SCANNING PROBE MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOIL CONSERVATION; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

DEFECTS; EX-SITU ATOMIC FORCE MICROSCOPY; FILM QUALITIES; IN-SITU; LOW DEFECT DENSITIES; LOW-ENERGY ELECTRON DIFFRACTION; MISFIT DISLOCATIONS; SI(001); SPOT PROFILE ANALYSIS; STRAIN STATES; SURFACE ROUGHNESS;

MOLECULAR BEAM EPITAXY;

EID: 50849136486     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.02.038     Document Type: Article

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