STM investigation of the initial adsorption stage of Bi on Si(1 0 0)-(2 × 1) and Ge(1 0 0)-(2 × 1) surfaces

Surface Science

Volumn 482-485, Issue PART 1, 2001, Pages 370-375

  Bulavenko, S Yu ^a   Koval, I F ^a   Melnik, P V ^a   Nakhodkin, N G ^a   Zandvliet, H J W ^b  

^a TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Bismuth; Germanium; Scanning tunneling microscopy; Silicon; Surface diffusion

Indexed keywords

ADSORPTION; BISMUTH; CHEMICAL BONDS; DIFFUSION IN SOLIDS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE TREATMENT;

SURFACE DIFFUSION;

SURFACE PHENOMENA;

EID: 0035919018     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)00804-4     Document Type: Conference Paper

References (12)