The effect of field oxide recess on cell VTH distribution of NAND flash cell arrays

IEEE Electron Device Letters

Volumn 29, Issue 9, 2008, Pages 1050-1052

  Park, Mincheol ^a   Lee, Chang Sub ^a   Hur, Sung Hoi ^a   Kim, Keonsoo ^a   Lee, Won Seong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Cell VTH distribution; NAND flash memory; Narrow width effect

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC FIELDS; FLASH MEMORY; SEMICONDUCTING SILICON; SPEECH ANALYSIS;

CELL VTH DISTRIBUTION; FIELD OXIDE; NAND FLASH MEMORY; NARROW WIDTH EFFECT;

CELLS;

EID: 50649088663     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001797     Document Type: Article

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