Monte Carlo simulation of hot-phonon effects in a biased AlGaN/GaN channel

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Ramonas, M ^a   Matulionis, A ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; ENERGY DISSIPATION; GALLIUM NITRIDE; MICROWAVES; MONTE CARLO METHODS; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

DRIFT VELOCITY; HOT PHONONS;

HETEROJUNCTIONS;

EID: 1942484341     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/139     Document Type: Conference Paper

References (11)

1. Eastman L F, Tilak V, Kaper V, Smart J, Thompson R, Green B, Shealy J R and Prunty T 2002 Phys. Status Solidi a 194 433
2. Kocevar P 1985 Physica B+C 134 155
3. Shah J, Pinczuk A, Gossard A C and Wiegmann W 1983 Appl. Phys. Lett. 42 55
4. Lugli P, Jacoboni C, Reggiani L and Kocevar P 1987 Appl. Phys. Lett. 50 1251
5. Artaki M and Price P J 1989 J. Appl. Phys. 65 1317
6. Ridley B K 1989 Semicond. Sci. Technol. 4 1142
7. Gokden S, Balkan N and Ridley B K 2003 Semicond. Sci. Technol. 18 206
8. Ramonas M, Matulionis A and Rota L 2003 Semicond. Sci. Technol. 18 118
9. Matulionis A, Liberis J, Matulionienė I, Ramonas M, Eastman L F, Shealy J R, Tilak V and Vertiatchikh A 2003 Phys. Rev. B 68 035338
10. Ardaravičius L, Matulionis A, Liberis J, Kiprianovičius O, Ramonas M, Eastman L F, Shealy J R and Vertiatchikh A 2003 Appl. Phys. Lett. 83 4038
11. Tsen K T, Ferry D K, Botchkarev A, Sverdlov B, Salvador A and Morkoç H 1998 Appl. Phys. Lett. 72 2132