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Volumn 2007, Issue , 2007, Pages 299-302

Threshold voltage in Tunnel FETs: Physical definition, extraction, scaling and impact on IC design

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; GATE DIELECTRICS; INTEGRATED CIRCUIT LAYOUT; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

EID: 39549105378     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430937     Document Type: Conference Paper
Times cited : (44)

References (12)
  • 1
    • 3643062973 scopus 로고
    • Silicon surface tunnel transistor
    • W. Reddick and G. Amaratunga, "Silicon surface tunnel transistor," Appl. Phys. Lett., vol. 67, no. 4, 1995, pp. 494-496.
    • (1995) Appl. Phys. Lett , vol.67 , Issue.4 , pp. 494-496
    • Reddick, W.1    Amaratunga, G.2
  • 2
    • 0033341645 scopus 로고    scopus 로고
    • Three-terminal silicon surface junction tunneling device for room temperature operation
    • J. Koga and A. Toriumi, "Three-terminal silicon surface junction tunneling device for room temperature operation," IEEE Elec. Dev. Lett., vol. 20, no. 10, 1999, pp. 529-531.
    • (1999) IEEE Elec. Dev. Lett , vol.20 , Issue.10 , pp. 529-531
    • Koga, J.1    Toriumi, A.2
  • 3
    • 0034225075 scopus 로고    scopus 로고
    • A vertical MOS-gated Esaki tunneling transistor in silicon
    • W. Hansch, C. Fink, J. Schulze, and I. Eisele, "A vertical MOS-gated Esaki tunneling transistor in silicon," Thin Solid Films, vol. 369, 2000, pp. 387-389.
    • (2000) Thin Solid Films , vol.369 , pp. 387-389
    • Hansch, W.1    Fink, C.2    Schulze, J.3    Eisele, I.4
  • 4
    • 1842581409 scopus 로고    scopus 로고
    • Lateral interband tunneling transistor in silicon-on-insulator
    • C. Aydin, et al., "Lateral interband tunneling transistor in silicon-on-insulator," Appl. Phys. Lett., vol. 84, no. 10, 2004, pp. 1780-1782.
    • (2004) Appl. Phys. Lett , vol.84 , Issue.10 , pp. 1780-1782
    • Aydin, C.1
  • 5
    • 19744366972 scopus 로고    scopus 로고
    • J. Appenzeller, Y.-M. Lin, J. Knoch, and Ph. Avouris, Band-to-band tunneling in carbon nanotube field-effect transistors, Phys. Rev. Lett., 93, no. 19, 2004, pp. 196805-1-4.
    • J. Appenzeller, Y.-M. Lin, J. Knoch, and Ph. Avouris, "Band-to-band tunneling in carbon nanotube field-effect transistors," Phys. Rev. Lett., vol. 93, no. 19, 2004, pp. 196805-1-4.
  • 6
    • 4544248640 scopus 로고    scopus 로고
    • Complementary tunneling transistor for low power application
    • P.-F. Wang, et al., "Complementary tunneling transistor for low power application," Solid-State Elec., vol. 48, 2004, pp. 2281-2286.
    • (2004) Solid-State Elec , vol.48 , pp. 2281-2286
    • Wang, P.-F.1
  • 8
    • 0026819795 scopus 로고
    • A new recombination model for device simulation including tunneling
    • G. Hurkx, D. Klaassen, and M. Knuvers, "A new recombination model for device simulation including tunneling," IEEE Trans. Elec. Dev., vol. 39, no. 2, 1992, pp. 331-338.
    • (1992) IEEE Trans. Elec. Dev , vol.39 , Issue.2 , pp. 331-338
    • Hurkx, G.1    Klaassen, D.2    Knuvers, M.3
  • 9
    • 39549087312 scopus 로고    scopus 로고
    • International
    • by Silvaco, May 26
    • Atlas User's Manual by Silvaco International, May 26, 2006.
    • (2006) Atlas User's Manual
  • 10
    • 18844389545 scopus 로고    scopus 로고
    • Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering
    • K. Bhuwalka, J. Schulze, and I. Eisele, "Scaling the vertical tunnel FET with tunnel bandgap modulation and gate workfunction engineering," IEEE Trans. Elec. Dev., vol. 52, no. 5, 2005, pp. 909-917.
    • (2005) IEEE Trans. Elec. Dev , vol.52 , Issue.5 , pp. 909-917
    • Bhuwalka, K.1    Schulze, J.2    Eisele, I.3
  • 11
    • 0042936307 scopus 로고
    • The effect of channel implants on MOS transistor characterization
    • R. Booth, M. White, H. Wong, and T. Krutsick, "The effect of channel implants on MOS transistor characterization," IEEE Trans. Elec. Dev., vol. ED-34, no. 12, 1987, pp. 2501-2509.
    • (1987) IEEE Trans. Elec. Dev , vol.ED-34 , Issue.12 , pp. 2501-2509
    • Booth, R.1    White, M.2    Wong, H.3    Krutsick, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.