Mapping the electrical properties of semiconductor junctions - The electron holographic approach

Scanning

Volumn 30, Issue 4, 2008, Pages 299-309

  Twitchett Harrison, Alison C ^a   Dunin Borkowski, Rafal E ^b   Midgley, Paul A ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Holography; Metrology; Three dimensional reconstruction; Tomography

Indexed keywords

CONFORMAL MAPPING; DATA RECORDING; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON HOLOGRAPHY; ELECTRONS; ELECTROSTATICS; HOLOGRAPHIC INTERFEROMETRY; HOLOGRAPHY; IMAGING TECHNIQUES; INTERFEROMETRY; LASER RECORDING; PHOTONICS; SEMICONDUCTOR MATERIALS; THREE DIMENSIONAL;

DEVICE STRUCTURES; DYNAMICAL DIFFRACTION; ELECTRICAL PROPERTIES; ELECTROSTATIC POTENTIAL; EXTERNAL-; FRINGING FIELDS; HIGH-RESOLUTION MAPPING; HIGH-SPATIAL RESOLUTION; METROLOGY; OFF-AXIS ELECTRON HOLOGRAPHY; QUANTITATIVE DETERMINATIONS; SPECIMEN THICKNESS; THREE-DIMENSIONAL RECONSTRUCTION; TOMOGRAPHY;

SEMICONDUCTOR JUNCTIONS;

ARTICLE; ELECTRICITY; HOLOGRAPHY; IMAGE RECONSTRUCTION; PHASE TRANSITION; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; THREE DIMENSIONAL IMAGING; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 50249107910     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.20125     Document Type: Article

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