Application of SIMS in microelectronics

Applied Surface Science

Volumn 203, Issue 204, 2003, Pages 404-408

  Tsukamoto, K ^a   Yoshikawa, S ^a   Toujou, F ^a   Morita, H ^a  

^a Matsushita Technoresearch Inc   (Japan)

Author keywords

Characterization; Laser diode; Optical disk; Semiconductor; SIMS

Indexed keywords

FABRICATION; MICROELECTRONICS; PHOTOLITHOGRAPHY; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; THIN FILMS;

MICROELECTRONIC MATERIALS;

SECONDARY ION MASS SPECTROMETRY;

EID: 0037438088     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00689-X     Document Type: Article

References (9)

1. International SEMATECH, The International Technology Roadmap for Semiconductors, 2000 Update.
2. T. Conard, H. De Witte, M. Schaekers, W. Vandervorst, in: A. Benninghoven, et al. (Eds.), Secondary Ion Mass Spectrometry, SIMS X II, Elsevier, Amsterdam, 2000, p. 381.
3. Petravic M., Svensson B.G., Williams J.S., Glasko J.M. Nucl. Inst. Meth. B. 118:1996;151.
4. Wittmaack K., Menzel N. Appl. Phys. Lett. 50:1987;815.
5. S.F. Corcoran, S.K. Hofmeister, D.P. Griffis, R.W. Linton, in: A. Benninghoven, et al. (Eds.), Secondary Ion Mass Spectrometry, SIMS V II, Wiley, New York, 1990, p. 643.
6. Vriezema C.J., Janssen K.T., Boudewijn P.R. Appl. Phys. Lett. 54:1989;1981.
7. G.M. Guryanov, R. Loesing, M.O. Aboelfotoh, J. Narayan, M.A. Borek, D.P. Griffis, in: A. Benninghoven, et al. (Eds.), Secondary Ion Mass Spectrometry, SIMS X II, Elsevier, Amsterdam, 2000, p. 589.
8. Y. Gao, S. Mitha, C. Huang, R. Clark-Phelps, L. Wang, K. Shingu, in: G. Gillen, et al. (Eds.), Secondary Ion Mass Spectrometry, SIMS X I, Wiley, New York, 1998, p. 193.
9. M. Maier, S. Muller, A. Ramakrishnan, in: A. Benninghoven, et al. (Eds.), Secondary Ion Mass Spectrometry, SIMS X II, Elsevier, Amsterdam, 2000, p. 661.