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Volumn , Issue , 2008, Pages 146-151

Efficient circuit-level modelling of ballistic CNT using piecewise non-linear approximation of mobile charge density

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BALLISTICS; CARBON; CHARGE DENSITY; CHLORINE COMPOUNDS; DRAIN CURRENT; EXPLOSIVES; INDUSTRIAL ENGINEERING; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; NETWORKS (CIRCUITS); POLYNOMIAL APPROXIMATION; SPEED; SPICE; TESTING;

EID: 49849106531     PISSN: 15301591     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DATE.2008.4484677     Document Type: Conference Paper
Times cited : (13)

References (14)
  • 1
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    • (2003) Electron Devices, IEEE , vol.50 , Issue.9 , pp. 1853-1864
    • Rahman, A.1    Guo, J.2    Datta, S.3    Lundstrom, M.S.4
  • 3
    • 33947620020 scopus 로고    scopus 로고
    • Arash Hazeghi, Tejas Krishnamohan, and H.-S. Philip Wong. Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling. In Sixth IEEE Conference on Electron Devices, 54, Lausanne, Switzerland, March 2007.
    • Arash Hazeghi, Tejas Krishnamohan, and H.-S. Philip Wong. Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling. In Sixth IEEE Conference on Electron Devices, volume 54, Lausanne, Switzerland, March 2007.
  • 5
    • 20344368353 scopus 로고    scopus 로고
    • Semi-empirical SPICE models for carbon nanotube FET logic
    • Munich, Germany, 16-19 Aug
    • Chris Dwyer, Moky Cheung, and Daniel J. Sorin. Semi-empirical SPICE models for carbon nanotube FET logic. In 4th IEEE Conference on Nanotechnology, Munich, Germany, 16-19 Aug. 2004.
    • (2004) 4th IEEE Conference on Nanotechnology
    • Dwyer, C.1    Cheung, M.2    Sorin, D.J.3
  • 6
    • 5444266124 scopus 로고    scopus 로고
    • A circuit-compatible model of ballistic carbon nanotube field-effect transistors
    • October
    • Arijit Raychowdhury, Saibal Mukhopadhyay, and Kaushik Roy. A circuit-compatible model of ballistic carbon nanotube field-effect transistors. Applied Physics Letters, 23(10):1411-20, October 2004.
    • (2004) Applied Physics Letters , vol.23 , Issue.10 , pp. 1411-1420
    • Raychowdhury, A.1    Mukhopadhyay, S.2    Roy, K.3
  • 7
    • 34547236228 scopus 로고    scopus 로고
    • Modeling and analysis of circuit performance of ballistic CNFET
    • San Francisco, CA, USA, 24-28 July
    • Bipul C. Paul, Shinobu Fujita, Masaki Okajima, and Thomas Lee. Modeling and analysis of circuit performance of ballistic CNFET. In 2006 Design Automation Conference, San Francisco, CA, USA, 24-28 July 2006.
    • (2006) 2006 Design Automation Conference
    • Paul, B.C.1    Fujita, S.2    Okajima, M.3    Lee, T.4
  • 8
    • 42549141193 scopus 로고    scopus 로고
    • An efficient and symbolic model for charge densities in ballistic carbon nanotube FETs
    • Hamidreza Hashempour and Fabrizio Lombardi. An efficient and symbolic model for charge densities in ballistic carbon nanotube FETs. IEEE-NANO, 1:17-20, 2006.
    • (2006) IEEE-NANO , vol.1 , pp. 17-20
    • Hashempour, H.1    Lombardi, F.2
  • 9
    • 49849103844 scopus 로고    scopus 로고
    • Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, and Mark Lundstrom. Fettoy 2.0 - on line tool, 14 February 2006. https://www.nanohub.org/resources/220/.
    • Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, and Mark Lundstrom. Fettoy 2.0 - on line tool, 14 February 2006. https://www.nanohub.org/resources/220/.
  • 11
    • 33645154057 scopus 로고    scopus 로고
    • Ming-Hsun Yang, Kenneth B. K. Teo, Laurent Gangloff, William I. Milne, David G. Hasko, Yves Robert, and Pierre Legagneux. Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 88(11):113507-1-3, March 2006.
    • Ming-Hsun Yang, Kenneth B. K. Teo, Laurent Gangloff, William I. Milne, David G. Hasko, Yves Robert, and Pierre Legagneux. Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 88(11):113507-1-3, March 2006.
  • 13
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    • Ali Javey, Ryan Tu, Damon Farmer, Jing Guo, Roy Gordon, and Hongjie Dai1. High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. Nano Letters, 5:345-348, 2005.
    • Ali Javey, Ryan Tu, Damon Farmer, Jing Guo, Roy Gordon, and Hongjie Dai1. High performance n-type carbon nanotube field-effect transistors with chemically doped contacts. Nano Letters, 5:345-348, 2005.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.