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Volumn , Issue , 2007, Pages 33-37

A fast, numerical circuit-level model of carbon nanotube transistor

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; NUMERICAL MODELS; SPICE; TIMING CIRCUITS;

EID: 50849124751     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANOARCH.2007.4400855     Document Type: Conference Paper
Times cited : (12)

References (12)
  • 3
    • 33947620020 scopus 로고    scopus 로고
    • Arash Hazeghi, Tejas Krishnamohan, and H.-S. Philip Wong. Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling. In Sixth IEEE Conference on Electron Devices, 54, Lausanne, Switzerland, March 2007.
    • Arash Hazeghi, Tejas Krishnamohan, and H.-S. Philip Wong. Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling. In Sixth IEEE Conference on Electron Devices, volume 54, Lausanne, Switzerland, March 2007.
  • 5
    • 20344368353 scopus 로고    scopus 로고
    • Semi-empirical SPICE models for carbon nanotube FET logic
    • Munich, Germany, 16-19 Aug
    • C. Dwyer, M. Cheung, and D.J. Sorin. Semi-empirical SPICE models for carbon nanotube FET logic. In 4th IEEE Conference on Nanotechnology, Munich, Germany, 16-19 Aug. 2004.
    • (2004) 4th IEEE Conference on Nanotechnology
    • Dwyer, C.1    Cheung, M.2    Sorin, D.J.3
  • 6
    • 5444266124 scopus 로고    scopus 로고
    • A circuit-compatible model of ballistic carbon nanotube field-effect transistors
    • October
    • A. Raychowdhury, S. Mukhopadhyay, and K. Roy. A circuit-compatible model of ballistic carbon nanotube field-effect transistors. Applied Physics Letters, 23(10):1411-20, October 2004.
    • (2004) Applied Physics Letters , vol.23 , Issue.10 , pp. 1411-1420
    • Raychowdhury, A.1    Mukhopadhyay, S.2    Roy, K.3
  • 7
    • 34547236228 scopus 로고    scopus 로고
    • Modeling and analysis of circuit performance of ballistic CNFET
    • San Francisco, CA, USA, 24-28 July
    • B.C. Paul, S. Fujita, M. Okajima, and T. Lee. Modeling and analysis of circuit performance of ballistic CNFET. In 2006 Design Automation Conference, San Francisco, CA, USA, 24-28 July 2006.
    • (2006) 2006 Design Automation Conference
    • Paul, B.C.1    Fujita, S.2    Okajima, M.3    Lee, T.4
  • 8
    • 42549141193 scopus 로고    scopus 로고
    • An efficient and symbolic model for charge densities in ballistic carbon nanotube fets
    • H. Hashempour and F. Lombardi. An efficient and symbolic model for charge densities in ballistic carbon nanotube fets. IEEE-NANO, 1:17-20, 2006.
    • (2006) IEEE-NANO , vol.1 , pp. 17-20
    • Hashempour, H.1    Lombardi, F.2
  • 9
    • 50849091868 scopus 로고    scopus 로고
    • Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, and Mark Lundstrom. Fettoy 2.0 - on line tool, 14 February 2006. https://www.nanohub.org/resources/220/.
    • Anisur Rahman, Jing Wang, Jing Guo, Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, and Mark Lundstrom. Fettoy 2.0 - on line tool, 14 February 2006. https://www.nanohub.org/resources/220/.
  • 10
    • 33645154057 scopus 로고    scopus 로고
    • M.H. Yang, K.B.K. Teo, L. Gangloff, W.I. Milne, D.G. Hasko, Y. Robert, and P. Legagneux. Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 88{11:113507-1-3, March 2006.
    • M.H. Yang, K.B.K. Teo, L. Gangloff, W.I. Milne, D.G. Hasko, Y. Robert, and P. Legagneux. Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors. Applied Physics Letters, 88{11):113507-1-3, March 2006.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.