Segregation effects during GaAs overgrowth of InAs and InGaAs quantum dots studied by cross-sectional scanning tunneling microscopy

Physica Status Solidi C: Conferences

Volumn , Issue 4, 2003, Pages 1129-1132

  Eisele, H ^a   Timm, R ^a   Lenz, A ^a   Hennig, Ch ^a   Ternes, M ^a   Becker, S K ^a   Dahne M ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLETE DISSOLUTION; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; GAAS; GROWTH INTERRUPTION; INAS; INGAAS QUANTUM DOTS; SEGREGATION EFFECTS; VERTICAL SEGREGATION;

GALLIUM ARSENIDE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 49749151982     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303012     Document Type: Conference Paper

References (24)

1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, 1999).
2. R. Ruvimov, Z. Liliental-Weber, J. Washburn, N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg, Phys. Solid State 40, 781 (1998).
3. K. Scheerschmidt and P. Werner, in: Nano-Optoelectronics, edited by M. Grundmann (Springer, Berlin, 2002).
4. H. Eisele, Cross-Sectional Scanning Tunneling Microcopy of InAs/GaAs Quantum Dots (Wissenschaft & Technik, Berlin, 2002).
5. R. M. Feenstra, Semicond. Sci. Technol. 9, 2157 (1994).
6. W. Barvosa-Carter, M. E. Twigg, M. J. Yang, and L. J. Whitman, Phys. Rev. B 63, 245311 (2001).
7. W. Wu, J. R. Tucker, G. S. Solomon, and J. S. Harris, Appl. Phys. Lett. 71, 1083 (1997).
8. B. Legrand, B. Grandidier, J. P. Nys, D. Stiévenard, J. M. Gérard, and V. Thierry-Mieg, Appl. Phys. Lett. 73, 96 (1998).
9. B. Lita, R. S. Goldman, J. D. Phillips, and P. K. Bhattacharya, Appl. Phys. Lett. 74, 2824 (1999).
10. H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch, Appl. Phys. Lett. 75, 106 (1999).
11. H. Eisele, O. Flebbe, T. Kalka, and M. Dähne-Prietsch, Surf. Interface Anal. 27, 537 (1999).
12. O. Flebbe, H. Eisele, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch, J. Vac. Sci. Technol. B 17, 1639 (1999).
13. H. Eisele, O. Flebbe, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch, phys. stat. sol. (b) 215, 865 (1999).
14. N. Liu, J. Tersoff, O. Baklenov, A. L. Holmes, and C.-K. Shih, Phys. Rev. Lett. 84, 334 (2000).
15. B. Grandidier, Y. M. Niquet, B. Legrand, J. P. Nys, C. Priester, D. Stiévenard, J. M. Gérard, and V. Thierry-Mieg, Phys. Rev. Lett. 85, 1068 (2000).
16. N. Liu, H. K. Lyeo, C.-K. Shih, M. Oshima, T. Mano, and N. Koguchi, Appl. Phys. Lett. 80, 4345 (2002).
17. M. Dähne and H. Eisele, in: Nano-Optoelectronics, edited by M. Grundmann (Springer, Berlin, 2002).
18. H. Eisele, A. Lenz, Ch. Hennig, R. Timm, M. Ternes, and M. Dähne, J. Crystal Growth, 248, 322 (2003).
19. D. M. Bruls, J. W. A. M. Vugs, P. M. Koenraad, H. W. M. Salemink, J. H. Wolter, M. Hopkinson, M. S. Skolnick, F. Long, and S. P. A. Gill, Appl. Phys. Lett. 81, 1708 (2002).
20. A. Lenz, R. Timm, H. Eisele, Ch. Hennig, S. K. Becker, R. L. Sellin, U. W. Pohl, D. Bimberg, and M. Dähne, Appl. Phys. Lett. 81, 5150 (2002).
21. L. G. Wang, P. Kratzer, M. Scheffler, and Q. K. K. Liu, Appl. Phys. A 73, 161 (2001).
22. E. Steimetz, T. Wehnert, K. Haberland, J. T. Zettler, and W. Richter, J. Cryst. Growth 195, 530 (1998).
23. R. M. Feenstra, J. A. Stroscio, J. Tersoff, and A. P. Fein, Phys. Rev. Lett. 58, 1192 (1987).
24. H. Eisele and M. Dähne, Phys. Rev. B, submitted (2002).