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Applied Physics A: Materials Science and Processing

Volumn 73, Issue 2, 2001, Pages 161-165

Island dissolution during capping layer growth interruption

(4) Wang, L G a Kratzer, P a Scheffler, M a Liu, Q K K b

a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

b HAHN MEITNER INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOLUTION; INTERFACIAL ENERGY; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRUCTURE (COMPOSITION);

CAPPING LAYER GROWTH INTERRUPTION; ISLAND DISSOLUTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034887993 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390100854 Document Type: Article

Times cited : (30)

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