Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 322-327

  Eisele, H ^a   Lenz, A ^a   Hennig, Ch ^a   Timm, R ^a   Ternes, M ^a,b   Dahne M ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b UNIVERSITY OF LAUSANNE   (Switzerland)

Author keywords

A1. Low dimensional structures; A1. Nanostructures; A1. Scanning tunneling microscopy; A1. Segregation; A3. Metal organic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS;

LOW DIMENSIONAL STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037291270     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01888-2     Document Type: Conference Paper

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