Berkovich indentation-induced deformation behaviors of GaN thin films observed using cathodoluminescence and cross-sectional transmission electron microscopy

Applied Surface Science

Volumn 254, Issue 21, 2008, Pages 6749-6753

  Jian, Sheng Rui ^a  

^a I SHOU UNIVERSITY   (Taiwan)

Author keywords

Cathodoluminescence; Focused ion beam; GaN; MOCVD; Nanoindentation; Transmission electron microscopy

Indexed keywords

CATHODOLUMINESCENCE; DEFECTS; FOCUSED ION BEAMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOINDENTATION; OPTOELECTRONIC DEVICES; ORGANIC CHEMICALS; ORGANOMETALLICS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); BERKOVICH INDENTATION; BERKOVICH NANOINDENTATION; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEFORMATION BEHAVIOR; DISLOCATION NUCLEATION; FOCUSED ION BEAM MILLING; MECHANICAL DEFORMATION;

GALLIUM NITRIDE;

EID: 49549098159     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.04.078     Document Type: Article

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