Mechanical properties of InGaN thin films deposited by metal-organic chemical vapor deposition

Materials Chemistry and Physics

Volumn 109, Issue 2-3, 2008, Pages 360-364

  Jian, Sheng Rui ^a   Jang, Jason Shian Ching ^a   Lai, Yi Shao ^b   Yang, Ping Feng ^b   Yang, Chu Shou ^c   Wen, Hua Chiang ^d   Tsai, Chien Huang ^e  

^a I SHOU UNIVERSITY   (Taiwan)

^b ADVANCED SEMICONDUCTOR ENGINEERING INC   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^e NAN KAI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

InGaN; MOCVD; Nanoindentation; XRD

Indexed keywords

INDIUM COMPOUNDS; MECHANICAL PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING PROBE MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DEPOSITION TEMPERATURES; INGAN THIN FILMS; LATTICE FRICTION STRESS;

THIN FILMS;

EID: 41249092406     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2007.12.007     Document Type: Article

References (18)

1. Yu E.T. III-V nitride semiconductors: applications and devices. In: Manasreh M.O. (Ed). Optoelectronic Properties of Semiconductors and Superlattices vol. 16 (2003), Taylor & Francis, New York
2. Chowdhury S., and Laugier M.T. Nanotechnology 15 (2004) 1017
3. Hurley D.C., Tewary V.K., and Richards A.J. Thin Solid Films 398 (2001) 326
4. Djemia P., Dugautier C., Chauveau T., Dogheche E., De Barros M.I., and Vandenbulck L. J. Appl. Phys. 90 (2001) 3771
5. Kokai F., Taniwaki M., Ishihara M., and Koga Y. Appl. Phys. A 74 (2002) 533
6. Jian S.R., Fang T.H., and Chuu D.S. J. Electron. Mater. 32 (2003) 496
7. Li X.D., Gao H., Murphy C.J., and Caswell K.K. Nano Lett. 3 (2003) 1495
8. Li X.D., Wang X., Xiong Q., and Eklund P.C. Nano Lett. 5 (2005) 1982
9. Coleman V.A., Bradby J.E., Jagadish C., Munroe P., Heo Y.W., Pearton S.J., Norton D.P., Inoue M., and Yano M. Appl. Phys. Lett. 86 (2005) 203105
10. Pan D., Nieh T.G., and Chen M.W. Appl. Phys. Lett. 88 (2006) 161922
11. Lee D., Jia S., Banerjee S., Beck J., Herman I.P., and Kysar J.W. Phys. Rev. Lett. 98 (2007) 026103
12. Bei H., Lu Z.P., and George E.P. Phys. Rev. Lett. 93 (2004) 125504
13. Bull S.J. J. Phys. D: Appl. Phys. 38 (2005) R393
14. Qin Z., Chen Z., Tong Y., Lu S., and Zhang G. Appl. Phys. A 74 (2002) 655
15. Oliver W.C., and Pharr G.M. J. Mater. Res. 7 (1992) 1564
16. Vook R.W. In: Matthews J.W. (Ed). Epitaxial Growth (1975), Academic, New York
17. Venkatraman R., and Bravman J.C. J. Mater. Res. 7 (1992) 2040
18. Bobji M.S., Biswas S.K., and Pethica J.B. Appl. Phys. Lett. 71 (1997) 1059