Evaluation of AlN single-crystal grown by sublimation method

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 45-49

  Miyanaga, Michimasa ^a   Mizuhara, Naho ^a   Fujiwara, Shinsuke ^a   Shimazu, Mitsuru ^a   Nakahata, Hideaki ^a   Kawase, Tomohiro ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

A2. Growth from vapor; A2. Single crystal growth; B1. Nitrides

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ETCH PIT DENSITY (EPD); GROWTH FROM VAPOR; SINGLE CRYSTAL GROWTH;

SINGLE CRYSTALS;

EID: 33847279052     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.233     Document Type: Article

References (7)

1. Slack G.A., and McNelly T.F. J. Crystal Growth 34 (1976) 263
2. Melnik Yu., Soukhoveev V., Ivantsov V., Sizov V., Pechnikov A., and Tsvetkov K. Phys. Stat. Sol. 200 1 (2003) 22
3. Epelbaum B.M., Bickermann M., and Winnacker A. J. Crystal Growth 275 (2005) e479
4. Mokhov E.N., Avdeev O.V., Barash I.S., Chemekova T.Yu., Roenkov A.D., Segal A.S., Wolfson A.A., Makarov Yu.N., Ramm M.G., and Helava H. J. Crystal Growth 281 (2005) 93
5. Shi Y., Liu Lianghong Liu B., Edgar J.H., Payzant E.A., and Hayes J.M. Martin kuball, MRS Internet. J. Nitride Semicond. Res. 6,5 (2001)
6. Tanaka M., Nakahata S., Sogabe K., Nakahata H., and Tobioka M. Jpn. J. Appl. Phys. 36 (1997) L1062
7. Liu L., Edgar J.H., Rajasingam S., and Kuball M. J. Appl. Phys. 92 9 (2002) 5183