Origin of vacancy and interstitial stabilization at the amorphous-crystalline Si interface

Journal of Applied Physics

Volumn 96, Issue 6, 2004, Pages 3334-3338

  Harrison, Scott A ^a   Yu, Decai ^a   Edgar, Thomas F ^a   Hwang, Gyeong S ^a   Kirichenko, Taras A ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS RANDOM NETWORK (CRN) MODEL; ELECTRICAL ACTIVATION; INTERSTITIAL STABILIZATION; TRANSIENT ENHANCED DIFFUSION (TED);

AMORPHOUS MATERIALS; CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; INTERFACES (MATERIALS); ION IMPLANTATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; PROBABILITY DENSITY FUNCTION; RAPID THERMAL ANNEALING;

SILICON;

EID: 4944231469     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1778475     Document Type: Article

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