Diffusion of the Diboron Pair in Silicon

Physical Review Letters

Volumn 89, Issue 5, 2002, Pages

  Hwang, Gyeong S ^a   Goddard, William A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; APPROXIMATION THEORY; DIFFUSION IN SOLIDS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; PROBABILITY DENSITY FUNCTION; REACTION KINETICS; SILICON; TEMPERATURE;

DIBORON PAIR; ENERGY CONFIGURATION; GENERALIZED GRADIENT APPROXIMATION; LOCAL DENSITY APPROXIMATION;

BORON;

EID: 0037194131     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.89.055901     Document Type: Article

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