Study on fence-free platinum etching using chlorine-based gases in inductively coupled plasma

Journal of the Electrochemical Society

Volumn 144, Issue 11, 1997, Pages

  Chung, Chee Won ^a   Song, Ho Gun ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHLORINE; DEPOSITION; PLASMAS; PLATINUM; PLATINUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS; STRUCTURE (COMPOSITION); THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCH RATE; FENCE FRE ETCHING; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; INDUCTIVELY COUPLED PLASMA;

DRY ETCHING;

EID: 0031268211     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838073     Document Type: Article

References (17)

1. L. H. Parker and A. F. Tasch, IEEE Circuit Devices Magn., 6, 17 (1990).
2. Y. Shimada, Y. Nagano, E. Fujii, M. Azuma, Y. Uemoto, T. Sumi, Y. Judai, S. Hayashi, N. Moriwaki, J. Nakane, and T. Otsuki, Integr. Ferroelectr., 11, 229 (1990).
3. M. Klee, R. Eusemann, R. Waser, W. Brand, and H. V. Hal, J. Appl. Phys., 72, 1566 (1992).
4. B. A. Tuttle, T. J. Headley, B. C. Bunker, R. W. Schwartz, T. J. Zender, C. L. Hernandez, D. C. Goodnow, R. J. Tissot, and J. Michel, J. Mater. Res., 7, 1876 (1992).
5. P. H. Ansari and A. Safari, Integr. Ferroelectr., 7, 185 (1995).
6. M. Keijser, P. J. Veldhoven, and G. J. M. Dormans, Mater. Res. Soc. Symp. Proc., 310, 223 (1993).
7. K. Nishikawa, Y. Kusumi, T. Oomori, M. Hanazaki, and K. Namba, Jpn. J. Appl. Phys., 32, 6102 (1993).
8. S. Yokoyama, Y. Ito, K. Ishihara, K. Hamada, S. Ohnishi, J. Kudo, and K. Sakiyama, ibid., 34, 767 (1995).
9. J. J. van Glabbeek, G. A. C. M. Spierings, M. J. E. Ulenaers, G. J. M. Dormans, and P. K. Larson, Mater. Res. Soc. Symp. Proc., 310, 127 (1993).
10. W. J. Yoo, J. H. Hahm, H. W. Kim, C. O. Jung, Y. B. Koh, and M. Y. Lee, Jpn. J. Appl. Phys., 35, 2501 (1996).
11. C. E. Farrell, K. R. Milkove, C. Wang, and D. E. Kotecki, Integr. Ferroelectr., 16, 109 (1997).
12. C. W. Chung and C. J. Kim, Jpn. J. Appl. Phys., 36, 2747 (1997).
13. R. C. Weast, in CRC Handbook of Chemistry and Physics, 68th ed., B-114, CRC Press, Boca Raton, FL (1988).
14. F. Fracassi, R. d'Agostino, and A. Cacucci, J. Vac. Sci. Technol. A, 13, 63 (1995).
15. W. C. Dautremont, R. A. Gottscho, and R. J. Schutz, in Semiconductor Materials and Process Technology Handbook, G. E. McGuire, Editor, p. 257, Noyes Publications, Park Ridge, NJ (1988).
16. L. R. Williston, I. Bello, and W. M. Lau, J. Vac. Sci. Technol. A, 10, 1365 (1992).
17. S. S. Ou, J. Vac. Sci. Technol. B, 14, 3226 (1996).