SOI pixel developments in a 0.15μm technology

IEEE Nuclear Science Symposium Conference Record

Volumn 2, Issue , 2007, Pages 1040-1046

  Arai, Y ^a,b   Ikegami, Y ^c   Unno, Y ^c   Tsuboyama, T ^c   Terada, S ^c   Hazumi, M ^c   Kohriki, T ^c   Ikeda, H ^d   Hara, K ^e   Miyake, H ^e   Ishino, H ^f   Varner, G ^g   Martin, E ^g   Tajima, H ^h   Ohno, M ⁱ   Fukuda, K ⁱ   Komatsubara, H ⁱ   Ida, J ⁱ   Hayashi, H ⁱ   Kawai, Y ⁱ  

^a IEEE

^b INSTITUTE OF PARTICLE AND NUCLEAR STUDIES   (Japan)

^c HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^d JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^e UNIVERSITY OF TSUKUBA   (Japan)

^f TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^g University of Hawaii   (United States)

^h SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

ⁱ OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MEDICAL IMAGING; PIXELS; PLASMA FILLED WAVEGUIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SPACE APPLICATIONS; WAFER BONDING;

HIGH ENERGIES; HIGH TEMPERATURES; INDUSTRIAL TECHNOLOGIES; JAPANESE UNIVERSITIES; LOW-POWER APPLICATIONS; M TECHNOLOGIES; MARKET SUPPLIERS; PIXEL DETECTORS; RADIATION HARDNESSES; RADIATION SENSORS; SINGLE WAFERS; SOI CMOS; SOI DEVICES; SOI PROCESSES; SOI WAFERS; SPEED PROCESSORS;

SILICON WAFERS;

EID: 48349133954     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NSSMIC.2007.4437189     Document Type: Conference Paper

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