Determination of the surface reactivity of growth species in the AP-MOCVD of ZnO from DEZ and H2O and thermal analysis of the "captured" intermediate species

Journal of Crystal Growth

Volumn 310, Issue 16, 2008, Pages 3843-3847

  Velasco, Angelito ^a   Takasaki, Yasuhiro ^a   Minami, Wataru ^a   Ik Lee, Jeong ^b   Komiyama, Hiroshi ^b   Kim, Hee joon ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Surface reaction rate constant; A1. Thermal analysis; A3. Metal organic chemical vapor deposition; B1. Zinc compounds

Indexed keywords

HEXANE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ZINC COMPOUNDS; ZINC ALLOYS; ZINC OXIDE;

(100) SILICON; FLOW TYPE; GROWTH SPECIES; MOCVD REACTOR; N-HEXANE; SURFACE REACTIVITY; ZNO FILMS;

SILICON WAFERS;

EID: 48049094995     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.05.040     Document Type: Article

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