-
2
-
-
0029409032
-
Film shape grown on micro-size trenches and holes by chemical vapor deposition: 3-dimensional monte carlo simulation
-
Akiyama, Y., Sato, T., & Imaishi, N. (1995b). Film shape grown on micro-size trenches and holes by chemical vapor deposition: 3-dimensional monte carlo simulation. Japan Journal of Applied Physics, 34, 6171-6177.
-
(1995)
Japan Journal of Applied Physics
, vol.34
, pp. 6171-6177
-
-
Akiyama, Y.1
Sato, T.2
Imaishi, N.3
-
3
-
-
0009569119
-
Micro and macro scale simulation of chemical vapor deposition of yttria stabilized zirconia film
-
submitted
-
Akiyama, Y., Sato, T., & Imaishi, N. (1998). Micro and macro scale simulation of chemical vapor deposition of yttria stabilized zirconia film. Journal of Crystal Growth, submitted.
-
(1998)
Journal of Crystal Growth
-
-
Akiyama, Y.1
Sato, T.2
Imaishi, N.3
-
4
-
-
0003109414
-
Better understanding of deposition chemistry of Cu from (hfac)Cu(tmvs) for the best growth rate uniformity
-
Chae, Y.K., Shimogaki, Y., & Komiyama, H. (1998a). Better understanding of deposition chemistry of Cu from (hfac)Cu(tmvs) for the best growth rate uniformity. Materials Research Society Conference Proceedings V 12, Advanced Metallization and Interconnect Systems for ULSI Applications, 1997 (pp. 515-520).
-
(1998)
Materials Research Society Conference Proceedings V 12, Advanced Metallization and Interconnect Systems for ULSI Applications, 1997
, pp. 515-520
-
-
Chae, Y.K.1
Shimogaki, Y.2
Komiyama, H.3
-
5
-
-
0032294215
-
Sensitive analysis of deposition chemistry of Cu from (hfac)Cu(tmvs) using well characterized test structure
-
San Francisco, April, 1998, Advanced interconnects and contact materials for future integrated circuits
-
Chae, Y.K., Shimogaki, Y, & Komiyama, H. (1998b). Sensitive analysis of deposition chemistry of Cu from (hfac)Cu(tmvs) using well characterized test structure. The Conference Proceedings of Materials Research Society, San Francisco, April, 1998, Volume 514, Advanced interconnects and contact materials for future integrated circuits, pp. 309-313.
-
(1998)
The Conference Proceedings of Materials Research Society
, vol.514
, pp. 309-313
-
-
Chae, Y.K.1
Shimogaki, Y.2
Komiyama, H.3
-
6
-
-
0032300280
-
Theoretical reactor design from the simple tubular reactor analysis for Wsix CVD process
-
San Francisco, April, 1998, Aadvanced interconnects and contact materials for future integrated circuits
-
Chae, Y.K., Egashira, Y., Shimogaki, Y., Sugawara, K., & Komiyama, H. (1998c). Theoretical reactor design from the simple tubular reactor analysis for Wsix CVD process. The Conference Proceedings of Materials Research Society, San Francisco, April, 1998, Volume 514, Aadvanced interconnects and contact materials for future integrated circuits, pp. 393-397.
-
(1998)
The Conference Proceedings of Materials Research Society
, vol.514
, pp. 393-397
-
-
Chae, Y.K.1
Egashira, Y.2
Shimogaki, Y.3
Sugawara, K.4
Komiyama, H.5
-
7
-
-
0000711468
-
New test structure to identify step coverage mechanisms in chemical vapor deposition of silicon dioxide
-
Cheng, L.Y., McVittie, J.P., Saraswat, K.C. (1991). New test structure to identify step coverage mechanisms in chemical vapor deposition of silicon dioxide. Applied Physics Letters, 58, 2147-2149.
-
(1991)
Applied Physics Letters
, vol.58
, pp. 2147-2149
-
-
Cheng, L.Y.1
McVittie, J.P.2
Saraswat, K.C.3
-
8
-
-
0009618309
-
Theoretical modeling of fluid mechanics and gas-phase chemistry in a rotating-disk chemical vapor deposition reactor
-
Coltrin, M., Kee, R., Evans, G., & Miller, G. (1987). Theoretical modeling of fluid mechanics and gas-phase chemistry in a rotating-disk chemical vapor deposition reactor. Proceedings of 10th International Conference on CVD (pp. 33-41).
-
(1987)
Proceedings of 10th International Conference on CVD
, pp. 33-41
-
-
Coltrin, M.1
Kee, R.2
Evans, G.3
Miller, G.4
-
9
-
-
0016027145
-
Chemical-reaction engineering in the semiconductor industry
-
Eversteyn, F.C. (1974). Chemical-reaction engineering in the semiconductor industry. Philips Research Report, 29, 45-66.
-
(1974)
Philips Research Report
, vol.29
, pp. 45-66
-
-
Eversteyn, F.C.1
-
10
-
-
0028403610
-
Step coverage analysis for hexamethyldisiloxane and ozone atmospheric pressure chemical vapor deposition
-
Fujino, K., Egashira, Y., Shimogaki, Y., & Komiyama, H. (1994). Step coverage analysis for hexamethyldisiloxane and ozone atmospheric pressure chemical vapor deposition. Japan Journal of Applied Physics, 33, L473-L475.
-
(1994)
Japan Journal of Applied Physics
, vol.33
-
-
Fujino, K.1
Egashira, Y.2
Shimogaki, Y.3
Komiyama, H.4
-
11
-
-
0027642835
-
Step coverage simulation for tetraethoxysilane and ozone atmospheric pressure chemical vapor deposition
-
Fujino, K., Egashira, Y., Shimogaki, Y., & Komiyama, H. (1993). Step coverage simulation for tetraethoxysilane and ozone atmospheric pressure chemical vapor deposition. Journal of Electrochemical Society, 140, 2309-2312.
-
(1993)
Journal of Electrochemical Society
, vol.140
, pp. 2309-2312
-
-
Fujino, K.1
Egashira, Y.2
Shimogaki, Y.3
Komiyama, H.4
-
13
-
-
84987438465
-
A numerical and experimental analysis of reactor performance and deposition rates for CVD on monofilament
-
Gokogulu, S.A., Kuczmarski, M., Veitch, L., Tsui, P., & Chait, A. (1990). A numerical and experimental analysis of reactor performance and deposition rates for CVD on monofilament. Proceedings of 11th International Conference on CVD (pp. 31-37).
-
(1990)
Proceedings of 11th International Conference on CVD
, pp. 31-37
-
-
Gokogulu, S.A.1
Kuczmarski, M.2
Veitch, L.3
Tsui, P.4
Chait, A.5
-
14
-
-
0032304295
-
3
-
San Francisco, April, 1998, Advanced interconnects and contact materials for future integrated circuits
-
3. The Conference Proceedings of Materials Research Society, San Francisco, April, 1998, Volume 514, Advanced interconnects and contact materials for future integrated circuits, pp. 501-504.
-
(1998)
The Conference Proceedings of Materials Research Society
, vol.514
, pp. 501-504
-
-
Hamamura, H.1
Shimogaki, Y.2
Akiyama, Y.3
Egashira, Y.4
Komiyama, H.5
-
15
-
-
0025403732
-
Growth kinetics of polycrystalline silicon from silane by thermal chemical vapor deposition method
-
Hashimoto, K., Miura, K., Masuda, T., Toma, M., Sawai, H., & Kawase, M. (1990). Growth kinetics of polycrystalline silicon from silane by thermal chemical vapor deposition method. Journal of Electrochemical Society, 137, 1000-1007.
-
(1990)
Journal of Electrochemical Society
, vol.137
, pp. 1000-1007
-
-
Hashimoto, K.1
Miura, K.2
Masuda, T.3
Toma, M.4
Sawai, H.5
Kawase, M.6
-
16
-
-
0009602468
-
Thermochemical data for silicon containing species from ab-initio electronic structure calculations
-
Ho, P., & Melius, C.F. (1990). Thermochemical data for silicon containing species from ab-initio electronic structure calculations. Proceedings of 11th International Conference on CVD (pp. 17-23).
-
(1990)
Proceedings of 11th International Conference on CVD
, pp. 17-23
-
-
Ho, P.1
Melius, C.F.2
-
17
-
-
0001622837
-
Laser-induced fluorescence measurements and kinetic analysis of si atom formation in a rotating disk chemical vapor deposition reactor
-
Ho, P., Coltrin, M., & Breiland, W.G. (1994). Laser-induced fluorescence measurements and kinetic analysis of si atom formation in a rotating disk chemical vapor deposition reactor. Journal of Physical Chemistry, 98, 10138-10147.
-
(1994)
Journal of Physical Chemistry
, vol.98
, pp. 10138-10147
-
-
Ho, P.1
Coltrin, M.2
Breiland, W.G.3
-
21
-
-
0024755516
-
Deposition profile simulation using the direct simulation Monte Carlo method
-
Ikegawa, M., & Kobayashi, J. (1989). Deposition profile simulation using the direct simulation Monte Carlo method. Journal of Electrochemical Society, 136, 2982-2986.
-
(1989)
Journal of Electrochemical Society
, vol.136
, pp. 2982-2986
-
-
Ikegawa, M.1
Kobayashi, J.2
-
22
-
-
0031248163
-
Micro/macro modeling of CVD synthesis
-
Imaishi, N., Sato, T., Kimura, M., & Akiyama, Y. (1997). Micro/macro modeling of CVD synthesis. Journal of Crystal Growth, 180, 680-690.
-
(1997)
Journal of Crystal Growth
, vol.180
, pp. 680-690
-
-
Imaishi, N.1
Sato, T.2
Kimura, M.3
Akiyama, Y.4
-
23
-
-
85004670914
-
-
Inagaki, T., & Komiyama, H. (1989). Rapid Growth of AlN Films by Particle Precipitation Aided Chemical Vapor Deposition, (In Japanese) Kogaku Kogaku Ronbunshu, 15, 849-856.
-
(1989)
Rapid Growth of AlN Films by Particle Precipitation Aided Chemical Vapor Deposition, (in Japanese) Kogaku Kogaku Ronbunshu
, vol.15
, pp. 849-856
-
-
Inagaki, T.1
Komiyama, H.2
-
24
-
-
0020129867
-
Chemical vapour deposition of silicon films in capillary layers
-
Janai, M. (1982). Chemical vapour deposition of silicon films in capillary layers. Thin Solid Films, 91, 211-216.
-
(1982)
Thin Solid Films
, vol.91
, pp. 211-216
-
-
Janai, M.1
-
27
-
-
0022961485
-
Micro-reaction engineering applications of reaction engineering to processing of electronic and photonic materials
-
Jensen, K.F. (1987). Micro-reaction engineering applications of reaction engineering to processing of electronic and photonic materials. Chemical Engineering Science, 42, 923-958.
-
(1987)
Chemical Engineering Science
, vol.42
, pp. 923-958
-
-
Jensen, K.F.1
-
30
-
-
0028697781
-
Modeling of a thermal gradient chemical vapor infiltration process for production of silicon carbide whisker/alumina composite
-
Kawase, M., Ikuta, Y., Tago, T., Masuda, T., & Hashimoto, K. (1994). Modeling of a thermal gradient chemical vapor infiltration process for production of silicon carbide whisker/alumina composite. Chemical Engineering Science, 49, 4861-4870.
-
(1994)
Chemical Engineering Science
, vol.49
, pp. 4861-4870
-
-
Kawase, M.1
Ikuta, Y.2
Tago, T.3
Masuda, T.4
Hashimoto, K.5
-
32
-
-
0002342712
-
Molecular size and its temperature dependence of growth species in chemical vapor deposition of aluminum nitride
-
Kim, H.J., Egashira, Y., & Komiyama, H. (1992). Molecular size and its temperature dependence of growth species in chemical vapor deposition of aluminum nitride. Journal of Chemical Vapour Deposition, 1, 20-41.
-
(1992)
Journal of Chemical Vapour Deposition
, vol.1
, pp. 20-41
-
-
Kim, H.J.1
Egashira, Y.2
Komiyama, H.3
-
34
-
-
0025846777
-
SPEEDIE: A profile simulator for etching deposition
-
McVittie, J.P., Rey, J.C., Bariya, A.J., IslamRaja, M.M., Cheng, L.Y., Ravi, S., & Saraswat, K.C. (1991). SPEEDIE: A profile simulator for etching deposition. Proceeding of Spie-International Society for Optical Engineering, 1392, 126-138.
-
(1991)
Proceeding of SPIE-International Society for Optical Engineering
, vol.1392
, pp. 126-138
-
-
McVittie, J.P.1
Rey, J.C.2
Bariya, A.J.3
IslamRaja, M.M.4
Cheng, L.Y.5
Ravi, S.6
Saraswat, K.C.7
-
36
-
-
84957230126
-
Monte Carlo low pressure deposition profile simulations
-
Rey, J.C., Cheng, L.-Y., Mevittie, J.P., & Saraswat, K.C. (1991). Monte Carlo low pressure deposition profile simulations. Journal of Vaccum Science and Technology A9, 1083-1087.
-
(1991)
Journal of Vaccum Science and Technology A9
, pp. 1083-1087
-
-
Rey, J.C.1
Cheng, L.-Y.2
MeVittie, J.P.3
Saraswat, K.C.4
-
37
-
-
0009624722
-
x films on micron-sized trenches: The reactivity of film precursors
-
x films on micron-sized trenches: The reactivity of film precursors, Applied Physics Letters, 61, 764-765.
-
(1992)
Applied Physics Letters
, vol.61
, pp. 764-765
-
-
Saito, T.1
Shimogaki, Y.2
Egashira, Y.3
Komiyama, K.4
Yuyama, Y.5
Sugawara, K.6
-
39
-
-
0009620397
-
x process
-
x process. Materials Research Society Conference Proceedings V9. Advanced Metallization for ULSI Applications in 1993 (pp. 475-479).
-
(1994)
Materials Research Society Conference Proceedings V9 Advanced Metallization for ULSI Applications in 1993
, pp. 475-479
-
-
Saito, T.1
Shimogaki, Y.2
Oshima, K.3
Egashira, Y.4
Sugawara, K.5
Takahiro, K.6
Nagata, S.7
Yamaguchi, S.8
Komiyama, H.9
-
40
-
-
0026997755
-
Silicon epitaxial growth by a fast wafer rotating reactor using silane gas
-
Sato, Y., Tamura, T., & Ohmine, T. (1992). Silicon epitaxial growth by a fast wafer rotating reactor using silane gas. Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials. 20-2, 772.
-
(1992)
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials
, vol.20
, Issue.2
, pp. 772
-
-
Sato, Y.1
Tamura, T.2
Ohmine, T.3
-
41
-
-
36549100688
-
Role of gas phase reactions in silicon chemical vapor deposition from monosilane
-
Scott, B.A., & Estes, R.D. (1989). Role of gas phase reactions in silicon chemical vapor deposition from monosilane. Applied Physics Letters, 55, 1005-1007.
-
(1989)
Applied Physics Letters
, vol.55
, pp. 1005-1007
-
-
Scott, B.A.1
Estes, R.D.2
-
43
-
-
5244276677
-
x-CVD processes by Monte Carlo simulation
-
x-CVD processes by Monte Carlo simulation. Materials Research Society Conference Proceedings V8, Advanced Metallization for ULSI Applications, 1992 (pp. 225-231).
-
(1993)
Materials Research Society Conference Proceedings V8, Advanced Metallization for ULSI Applications, 1992
, pp. 225-231
-
-
Shimogaki, Y.1
Uchida, T.2
Saito, T.3
Egashira, Y.4
Sugawara, K.5
Komiyama, H.6
-
44
-
-
0009607253
-
x films
-
x films. Proceedings of Eleventh International VLSI Multilevel Interconnection Conference (pp. 496-498).
-
(1994)
Proceedings of Eleventh International VLSI Multilevel Interconnection Conference
, pp. 496-498
-
-
Shimogaki, Y.1
Saito, Y.2
Ikawa, R.3
Aita, H.4
Egashira, Y.5
Sugawara, K.6
Komiyama, H.7
Nagata, S.8
Takashiro, K.9
Yamagushi, S.10
-
45
-
-
0001461173
-
Monte Carlo simulation on the step coverage and residual chlorine of CVD TiN films
-
Shimogaki, Y., Akiyama, Y., Ohkubo, T., Saito, T., Egashira, Y., Sugawara, K., Imaishi, N., & Komiyama, H. (1997). Monte Carlo simulation on the step coverage and residual chlorine of CVD TiN films. Materials Research Society Conference Proceedings V12, Advanced Metallization for ULSI Applications, 1997 (pp. 385-389).
-
(1997)
Materials Research Society Conference Proceedings V12, Advanced Metallization for ULSI Applications, 1997
, pp. 385-389
-
-
Shimogaki, Y.1
Akiyama, Y.2
Ohkubo, T.3
Saito, T.4
Egashira, Y.5
Sugawara, K.6
Imaishi, N.7
Komiyama, H.8
-
51
-
-
0032050288
-
A kinetic study of the chemical vapor deposition of silicon carbide from dichlorodimethylsilane precursors
-
Takeuchi, T., Egashira, Y., Osawa, T., & Komiyama, H. (1998a). A kinetic study of the chemical vapor deposition of silicon carbide from dichlorodimethylsilane precursors. Journal of Electrochemical Society, 145, 1277-1284.
-
(1998)
Journal of Electrochemical Society
, vol.145
, pp. 1277-1284
-
-
Takeuchi, T.1
Egashira, Y.2
Osawa, T.3
Komiyama, H.4
-
52
-
-
0009581271
-
-
submitted
-
Takeuchi, T. Egashira, Y., Osawa, T., & Komiyama, H. (1998b). Design and Scale-up of Chemical Vapor Deposition Reactors. Kagaku Kogaku Ronbunshu (In Japanese) submitted.
-
(1998)
Design and Scale-up of Chemical Vapor Deposition Reactors. Kagaku Kogaku Ronbunshu (in Japanese)
-
-
Takeuchi, T.1
Egashira, Y.2
Osawa, T.3
Komiyama, H.4
-
54
-
-
0026170276
-
Simulation of mass transport for deposition in via holes and trenches
-
Wulu, H.C., Saraswat, K.C., & McVittie, J.P. (1991). Simulation of mass transport for deposition in via holes and trenches. Journal of Electrochemical Society, 138, 1831-1840.
-
(1991)
Journal of Electrochemical Society
, vol.138
, pp. 1831-1840
-
-
Wulu, H.C.1
Saraswat, K.C.2
McVittie, J.P.3
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