Analysis of electrically biased paramagnetic defect centers in HfO 2 and HfxSi1-x O2/(100) Si interfaces

Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

  Chen, P T ^a   Triplett, B B ^a   Chambers, J J ^b   Colombo, L ^b   McIntyre, P C ^a   Nishi, Y ^a  

^a Stanford University   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS;

DEFECT CENTERS; EXPERIMENTAL OBSERVATIONS; PARAMAGNETIC DEFECTS;

PARAMAGNETIC MATERIALS;

EID: 47749097138     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2948922     Document Type: Article

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