Quantum well network structures: Investigating long-range thickness fluctuations in single InGaN/GaN quantum wells

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 831-836

  Van Der Laak, Nicole K ^a   Oliver, Rachel A ^a   Kappers, Menno J ^a   Humphreys, Colin J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; DISLOCATIONS (CRYSTALS); SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

INGAN STRIPS; NH3N2; SINGLE-TEMPERATURE METHOD; THREADING DISLOCATIONS (TD);

SEMICONDUCTOR QUANTUM WELLS;

EID: 33646386928     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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