Current properties of GaN V-defect using conductive atomic force microscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 29-32, 2006, Pages

  Lee, Ling ^a   Ku, Ching Shun ^a   Ke, Wen Cheng ^a   Ho, Chih Wei ^a   Huang, Huai Ying ^a   Lee, Ming Chih ^a   Chen, Wen Hsiung ^a   Chou, Wu Chin ^a   Chen, Wei Kuo ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

CAFM; Fowler Nordheim tunneling; GaN; Schottky; V defect

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; FIELD EMISSION; LEAKAGE CURRENTS;

CURRENT BREAKDOWN; SCHOTTKY EMISSION;

GALLIUM NITRIDE;

EID: 34548558568     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L817     Document Type: Article

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