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Chinese Physics Letters

Volumn 25, Issue 6, 2008, Pages 2190-2193

Interface evolution of TiN/poly Si as gate material on Si/HfO2 stack

(2) Jiang, Ran a Yao, Li Ting a

a SHANDONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISSIPATION; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); REFRACTORY METAL COMPOUNDS; SILICON COMPOUNDS; TIN; WORK FUNCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING CONDITION; ANNEALING TREATMENTS; GATE ELECTRODES; GATE MATERIALS; HFO 2/TIN; INTERFACE EVOLUTION; INTERFACE REACTIONS; INTERFACIAL PRODUCTS; STRONG DEPENDENCES; X-RAY PHOTOELECTRONS;

TITANIUM NITRIDE;

EID: 46749144179 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/25/6/073 Document Type: Article

Times cited : (2)

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