Comparison of metal gate electrodes on MOCVD HfO2

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 953-956

  Lemme, M C ^a   Efavi, J K ^a   Gottlob, H D B ^a   Mollenhauer, T ^a   Wahlbrink, T ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRODES; EXTRAPOLATION; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OXIDATION;

ATOMIC LAYER DEPOSITION (ALD); GATE ELECTRODES; HFO2; LEAKAGE CURRENT DENSITY;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 14644387563     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.018     Document Type: Conference Paper

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