Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor

Applied Physics Letters

Volumn 88, Issue 14, 2006, Pages

  Luan, H ^a   Alshareef, H N ^a   Harris, H R ^a   Wen, H C ^a   Choi, K ^a   Senzaki, Y ^a   Majhi, P ^a   Lee, B H ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURES; GATE ELECTRODES; SI IMPLANTATIONS; SILICON-ON-INSULATOR DEVICES;

DEPOSITION; ELECTRODES; ENERGY GAP; SEMICONDUCTOR MATERIALS; TITANIUM COMPOUNDS; TUNING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33646710655     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2188380     Document Type: Article

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