The effects of TaN thickness and strained substrate on the performance and PBTI characteristics of poly-Si/TaN/HfSiON MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 503-506

  Cho, H J ^a   Lee, H L ^a   Park, S G ^a   Park, H B ^a   Jeon, T S ^a   Jin, B J ^a   Kang, S B ^a   Lee, S G ^a   Kim, Y P ^a   Jung, I S ^a   Lee, J W ^a   Choi, J H ^b   Jeong, Y S ^b   Shin, Y G ^a   Chung, U I ^a   Moon, J T ^a  

^a SAMSUNG Electronics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL ENGINEERING; EQUIVALENT OXIDE THICKNESS (EOT); GATE DIELECTRICS; GATE LEAKAGE CURRENT; ELECTRICAL CHARACTERISTIC; GATE THICKNESS; HFSION FILM; METAL-GATE; MOSFETS; PERFORMANCE; POLY-SI GATES; SI SUBSTRATES; STRAINED SUBSTRATES;

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DENSIFICATION; DRY ETCHING; LEAKAGE CURRENTS; MOS CAPACITORS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; TANTALUM COMPOUNDS; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY; HAFNIUM COMPOUNDS; POLYCRYSTALLINE MATERIALS; SILICON COMPOUNDS; TITANIUM COMPOUNDS;

MOSFET DEVICES;

EID: 21644447788     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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