Optical properties of nanocrystalline GaN films prepared by annealing amorphous GaN in ammonia

Journal of Electronic Materials

Volumn 37, Issue 8, 2008, Pages 1049-1053

  Zhang, Z X ^a   Pan, X J ^a   Wang, T ^a   Jia, L ^a   Liu, L X ^a   Wang, W B ^a   Xie, E Q ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

Ammonification; Gallium nitride; Nanocrystalline; Photoluminescence; Raman spectroscopy

Indexed keywords

(PL) PROPERTIES; AMORPHOUS GAN; NANOCRYSTALLINE GAN FILMS; OPTICAL (PET) (OPET);

AMMONIA; ANNEALING; FILM PREPARATION; GALLIUM ALLOYS; GALLIUM NITRIDE; HEAT TREATMENT; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM;

AMORPHOUS FILMS;

EID: 46749123001     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0492-6     Document Type: Article

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