Photoconductive a-GaN prepared by reactive sputtering

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 174-177

  Nonomura, S ^a   Kobayashi, S ^a   Gotoh, T ^a   Hirata, S ^a   Ohmori, T ^a   Itoh, T ^a   Nitta, S ^a   Morigaki, K ^b  

^a GIFU UNIVERSITY   (Japan)

^b YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTERING;

LOW MID GAP DEFECT DENSITY OF STATE; MICROCRYSTALLINE GALLIUM NITRIDE THIN FILM; MICROCRYSTALLIZATION; OPTICAL GAP; REACTIVE SPUTTERING; SUB GAP ABSORPTION;

SEMICONDUCTING FILMS;

EID: 0030563535     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00675-3     Document Type: Article

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