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Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1245-1249

Preparation of field effect transistor using nano-crystalline GaN

(5) Kobayashi, S a Nonomura, S a Abe, K a Ushikoshi, K a Nitta, S a

a GIFU UNIVERSITY (Japan)

Author keywords

Nano crystalline gallium nitride (nc GaN); Thin film transistor (TFT)

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; GATES (TRANSISTOR); GRAIN SIZE AND SHAPE; HIGH TEMPERATURE OPERATIONS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SPUTTER DEPOSITION;

NANOCRYSTALLINE GALLIUM NITRIDE FILMS; REACTIVE SPUTTERING METHODS;

THIN FILM TRANSISTORS;

EID: 0032065156 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00305-6 Document Type: Article

Times cited : (18)

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