Properties of Ga1-x Mnx N epilayers grown by plasma-assisted molecular beam epitaxy using Raman spectroscopy

Materials Science and Engineering: B

Volumn 133, Issue 1-3, 2006, Pages 102-107

  Asghar, M ^a   Hussain, I ^a   Saleemi, F ^b   Bustarret, E ^c   Cibert, J ^d   Kuroda, S ^e   Marcet, S ^e   Mariette, H ^e   Bhatti, A S ^f  

^a THE ISLAMIA UNIVERSITY OF BAHAWALPUR   (Pakistan)

^b LAHORE COLLEGE FOR WOMEN UNIVERSITY   (Pakistan)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^d CNRS   (France)

^e CEA GRENOBLE   (France)

^f Pakistan   (Pakistan)

Author keywords

DARS; Ferromagnetism; LO phonon plasmon coupling; Magnetic semiconductors; Raman spectroscopy

Indexed keywords

CARRIER CONCENTRATION; FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; RAMAN SPECTROSCOPY;

DEFECT ACTIVATED RAMAN SCATTERING (DARS); LINE SHAPE FITTING ANALYSIS; LO PHONON-PLASMON COUPLING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33748157971     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.06.013     Document Type: Article

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