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Volumn 54, Issue 11, 2005, Pages 5450-5454
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Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition
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Author keywords
GaN; In situ SiNx deposition; Photoluminescence; Raman; Residual stress
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Indexed keywords
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EID: 27944484494
PISSN: 10003290
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (2)
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References (24)
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