GaN layers with different polarities prepared by radio frequency molecular beam epitaxy and characterized by Raman scattering

Chinese Physics

Volumn 16, Issue 9, 2007, Pages 2786-2790

  Zhong, Fei ^a   Li, Xin Hua ^a   Qiu, Kai ^a   Yin, Zhi Jun ^a   Ji, Chang Jian ^a   Cao, Xian Cun ^a   Han, Qi Feng ^a   Chen, Jia Rong ^a   Wang, Yu Qi ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

Gallium nitride; Polarity; Raman scattering

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; THERMAL EFFECTS;

BUFFER GROWTH; FREQUENCY SHIFTS; INVERSION DOMAIN BOUNDARIES; TRANSLATION SYMMETRY;

SEMICONDUCTING FILMS;

EID: 36749043151     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/16/9/048     Document Type: Article

References (15)

1. Liu N X, Wang H B, Liu J P Niu N H, Han J and Shen G D 2006 Acta Phys. Sin. 55 1424 (in Chinese)
2. Luo Y, Guo W P, Shao J P, Hu H, Han Y J, Xue S, Wang L, Sun C Z and Hao Z B 2004 Acta Phys. Sin. 53 2720 (in Chinese)
3. Zhang N Q, Keller S, Parish G, Heikman S, Denbaars S P and Mishra U K 2000 IEEE Electron. Device Lett. 21 421
4. Smith A R, Feenstra R M, Greve D W, Shin M S, Skowronski M, Neugebauer J and Northrup J E 1998 Appl. Phys. Lett. 72 2114
5. Shen X Q, Ide T, Cho S H, Shimizu M, Hara S and Okumura H 2000 Appl. Phys. Lett. 77 4013
6. Zhong F, Qiu K, Li X H, Yin Z J, Xie X J, Wang Y, Ji C J, Cao X C, Han Q F, Chen J R and Wang Y Q 2007 Chin. Phys. Lett. 24 240
7. Park M, Cuomo J J, Rodriguez B J, Rodriguez B J, Yang W C, Nemanich R J and Ambacher O 2003 J. Appl. Phys. 93 9542
8. Harima H 2002 J. Phys.: Condens. Matter 14 967
9. Xue Q K, Xue Q Z, Bakhtizin R Z, Hasegawa Y, Tsong I S T, Sakurai T and Ohno T 1999 Phys. Rev. Lett. 82 3074
10. Xue Q Z, Xue Q K, Kuwano S, Nakayama K and Sakurai T 2001 Chin. Phys. 10 157
11. Rouviere J L, Weyher J L, Seelmann-Eggebert M and Porowski S 1998 Appl. Phys. Lett. 73 668
12. Smith A R, Feenstra R M, Greve D W, Neugebauer J and Northrup J E 1997 Phys. Rev. Lett. 79 3934
13. Manasreh M O and Liang H X III-Nitride Semiconductors: Optical Properties I Chapter 8 340
14. Deguchi T, Ichiryu D, Sekiguchi K, Sota T, Matsuo R Azuhata T, Yamaguchi M, Yagi T, Chichiba S and Nakamura S 1999 J. Appl. Phys. 86 1860
15. Wetzel C, Walukiewicz W, Haller E E and Ager J 1996 Phys. Rev. B 53 1322