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Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7422-7427

Polysilicon high frequency devices for large area electronics: Characterization, simulation and modeling

Author keywords

Computer simulation; Electrical properties and measurements; Metal oxide semiconductor structure; Polysilicon

Indexed keywords

COMPUTER SIMULATION; ELECTRIC PROPERTIES; ELECTRONIC DOCUMENT IDENTIFICATION SYSTEMS; MOLECULAR ELECTRONICS; THIN FILM TRANSISTORS;

EID: 34547599226     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.088     Document Type: Article
Times cited : (11)

References (17)
  • 11
    • 34547578027 scopus 로고    scopus 로고
    • M.D. Jacunski, Characterization and modelling of short channel polysilicon Thin Film Transistors, PhD dissertation, Virginia University, 1997.
  • 15
    • 0033097335 scopus 로고    scopus 로고
    • Summary: For the first time, a scalable, low power, deep-submicron TFT-SONOS (Thin-Film Transistor Silicon-Oxide-Nitride-Oxide-Silicon) memory cell is described with characteristics rivaling those of single crystal devices (> 10/sup 6/cycles, /spl sim/1.6 V
    • Manku T. IEEE J. Solid-State Circuits 34 (1999) 277 Summary: For the first time, a scalable, low power, deep-submicron TFT-SONOS (Thin-Film Transistor Silicon-Oxide-Nitride-Oxide-Silicon) memory cell is described with characteristics rivaling those of single crystal devices (> 10/sup 6/cycles, /spl sim/1.6 V
    • (1999) IEEE J. Solid-State Circuits , vol.34 , pp. 277
    • Manku, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.