MOCVD growth of InN on Si(111) with various buffer layers

Journal of Electronic Materials

Volumn 37, Issue 8, 2008, Pages 1054-1057

  Huang, C C ^a   Chuang, R W ^a   Chang, S J ^a   Lin, J C ^b   Cheng, Y C ^b   Lin, W J ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Buffer layer; InN; Mobility; MOCVD; XRD

Indexed keywords

CHEMICAL VAPORS; MOCVD GROWTH; SI (111); SI(2 1 1) SUBSTRATES; X RAY DIFFRACTION (XRD);

ALUMINUM; BUFFER LAYERS; EPITAXIAL LAYERS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; SILICON; X RAY DIFFRACTION ANALYSIS;

VAPOR DEPOSITION;

EID: 46749085423     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0475-7     Document Type: Article

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