Improvement of the crystalline quality of InN layers grown on sapphire (0001) by surface nitridation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 A, 1999, Pages 1884-1887

  Tsuchiya, Tohru ^a   Yamano, Hirofumi ^a   Miki, Osamu ^a   Wakahara, Akihiro ^a   Yoshida, Akira ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Group III nitride; InN; Microwave excited nitrogen gas; Nitridation

Indexed keywords

EID: 0001445291     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1884     Document Type: Article

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