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Volumn 44, Issue 4 B, 2005, Pages 2390-2394

Evaluation of interface states density and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

Author keywords

DLTS; Interface states; Lifetime; Mapping; MOS; Strained Si; Transient capacitance

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; FERMI LEVEL; HETEROJUNCTIONS; MAPPING; MOS DEVICES; SECONDARY ION MASS SPECTROMETRY;

INTERFACE STATES; LIFETIME; STRAINED SI; TRANSIENT CAPACITANCE;

SILICON WAFERS;

EID: 21244504243 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.2390 Document Type: Conference Paper

Times cited : (3)

References (15)

1
- 35248858533
- C. G. Van de Walle and R. M. Martin: Phys. Rev. B 34 (1986) 5621.
- (1986) Phys. Rev. B , vol.34 , pp. 5621
- Van De Walle, C.G.¹ Martin, R.M.²

2
- 0000363279
- R. Oberhuber, G. Zandler and P. Vogl: Phys. Rev. B 58 (1998) 9941.
- (1998) Phys. Rev. B , vol.58 , pp. 9941
- Oberhuber, R.¹ Zandler, G.² Vogl, P.³

3
- 36449006709
- J. W. P. Hsu, E. A. Fitzgerald, Y. H. Xie, P. J. Silverman and M. J. Cardillo: Appl. Phys. Lett. 61 (1992) 1293.
- (1992) Appl. Phys. Lett. , vol.61 , pp. 1293
- Hsu, J.W.P.¹ Fitzgerald, E.A.² Xie, Y.H.³ Silverman, P.J.⁴ Cardillo, M.J.⁵

4
- 0035356458
- N. Sugii: J. Appl. Phys. 89 (2001) 6459.
- (2001) J. Appl. Phys. , vol.89 , pp. 6459
- Sugii, N.¹

5
- 0035473542
- S. J. Koester, K. Rim, J. O. Chu, P. M. Mooney, J. A. Ott and M. A. Hargrove: Appl. Phys. Lett. 79 (2001) 2148.
- (2001) Appl. Phys. Lett. , vol.79 , pp. 2148
- Koester, S.J.¹ Rim, K.² Chu, J.O.³ Mooney, P.M.⁴ Ott, J.A.⁵ Hargrove, M.A.⁶

6
- 0033284747
- L. S. Riley, S. Hall and J. M. Bonar: Solid-State Electron. 43 (1999) 2247.
- (1999) Solid-state Electron. , vol.43 , pp. 2247
- Riley, L.S.¹ Hall, S.² Bonar, J.M.³

7
- 0037408466
- S. K. Samanta, S. Maikap, S. Chatterjee and C. K. Maiti: Solid-State Electron. 47 (2003) 893.
- (2003) Solid-state Electron. , vol.47 , pp. 893
- Samanta, S.K.¹ Maikap, S.² Chatterjee, S.³ Maiti, C.K.⁴

8
- 2342637860
- W. Feng and W. K. Choi: J. Appl. Phys. 95 (2004) 4197.
- (2004) J. Appl. Phys. , vol.95 , pp. 4197
- Feng, W.¹ Choi, W.K.²

9
- 10744222423
- L. K. Bera, S. Mathew, N. Balasubramanian, G. Braithwaite, M. T. Currie, F. Singaporewala, J. Yap, R. Hammond, A. Lochtefeld, M. T. Bulsara and E. A. Fitzgerald: Appl. Surf. Sci. 224 (2004) 278.
- (2004) Appl. Surf. Sci. , vol.224 , pp. 278
- Bera, L.K.¹ Mathew, S.² Balasubramanian, N.³ Braithwaite, G.⁴ Currie, M.T.⁵ Singaporewala, F.⁶ Yap, J.⁷ Hammond, R.⁸ Lochtefeld, A.⁹ Bulsara, M.T.¹⁰ Fitzgerald, E.A.¹¹

10
- 0012119125
- D. W. Gao, Y. Kashiwazaki, K. Muraoka, H. Nakashima, K. Furukawa, Y. C. Liu, K. Shibata and T. Tsurushima: J. Appl. Phys. 82 (1997) 5680.
- (1997) J. Appl. Phys. , vol.82 , pp. 5680
- Gao, D.W.¹ Kashiwazaki, Y.² Muraoka, K.³ Nakashima, H.⁴ Furukawa, K.⁵ Liu, Y.C.⁶ Shibata, K.⁷ Tsurushima, T.⁸

11
- 0002004328
- M. Zerbst: Z. Angew. Phys. 22 (1966) 30.
- (1966) Z. Angew. Phys. , vol.22 , pp. 30
- Zerbst, M.¹

12
- 3142776507
- H. Nakashima, D. Wang, T. Noguchi, K. Itani, J. L. Wang and L. W. Zhao: Jpn. J. Appl. Phys. 43 (2004) 2402.
- (2004) Jpn. J. Appl. Phys. , vol.43 , pp. 2402
- Nakashima, H.¹ Wang, D.² Noguchi, T.³ Itani, K.⁴ Wang, J.L.⁵ Zhao, L.W.⁶

13
- 0004071496
- John Wiley & Sons, New York, 2nd ed.
- D. K. Schroder: Semiconductor Material and Device Characterization (John Wiley & Sons, New York, 1998) 2nd ed., p. 272.
- (1998) Semiconductor Material and Device Characterization , pp. 272
- Schroder, D.K.¹

14
- 36149024990
- R. Braunstein, A. R. Moore and F. Herman: Phys. Rev. 109 (1958) 695.
- (1958) Phys. Rev. , vol.109 , pp. 695
- Braunstein, R.¹ Moore, A.R.² Herman, F.³

15
- 0001064810
- K. S. Rabbani and D. R. Lamb: Solid-State Electron. 21 (1978) 1171.
- (1978) Solid-state Electron. , vol.21 , pp. 1171
- Rabbani, K.S.¹ Lamb, D.R.²

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