Electrically active defects in as-implanted, deep buried layers in p-type silicon

Journal of Applied Physics

Volumn 81, Issue 1, 1997, Pages 260-263

  Giri, P K ^a   Dhar, S ^a   Kulkarni, V N ^a   Mohapatra, Y N ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001257673     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363992     Document Type: Article

References (30)

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