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Volumn 59, Issue 8, 2004, Pages 1149-1157

Validation of vapor phase decomposition-droplet collection-total reflection X-ray fluorescence spectrometry for metallic contamination analysis of silicon wafers

Author keywords

Accuracy; Contamination analysis; Recovery rate; Validation; VPD DC TXRF

Indexed keywords

CONTAMINATION; DECOMPOSITION; FLUORESCENCE; LIGHT SCATTERING; MASS SPECTROMETRY; RECOVERY; SILICON WAFERS;

EID: 4644293541     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2004.03.011     Document Type: Conference Paper
Times cited : (27)

References (32)
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  • 16
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    • Determination of metallic contamination analysis on Ge wafers using direct - And droplet sandwich etch - Total reflection X-ray fluorescence spectroscopy
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    • (2003) Spectrochim. Acta Part B , vol.58 , pp. 2093-2104
    • Hellin, D.1    Bearda, T.2    Zhao, C.3    Raskin, G.4    Mertens, P.W.5    De Gendt, S.6    Heyns, M.M.7    Vinckier, C.8
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    • Semiconductor applications of nanoliter droplet methodology with TXRF analysis
    • Miller T.C., Sparks C.M., Havrilla G.J., Beebe M.R. Semiconductor applications of nanoliter droplet methodology with TXRF analysis. Spectrochim. Acta Part B. 59:2004;1117-1124.
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    • Miller, T.C.1    Sparks, C.M.2    Havrilla, G.J.3    Beebe, M.R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.