Study of Depth Distribution Shift of Copper on Silicon Wafer Surface Using Total Reflection X-Ray Fluorescence Spectrometry

Analytical Sciences

Volumn 12, Issue 2, 1996, Pages 277-279

  Mori, Yoshihiro ^a   Shimanoe, Kengo ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

angle scan; contamination; copper; depth distribution; silicon wafer; Total reflection X ray fluorescence spectrometry

Indexed keywords

EID: 21344444271     PISSN: 09106340     EISSN: 13482246     Source Type: Journal    
DOI: 10.2116/analsci.12.277     Document Type: Note

References (8)

1. K. Nishihagi, A. Kawabata, T. Taniguchi and S. Ikeda, Proceedings of the First International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, Hollywood, ECS Proceedings, PV90-9, 1990, p. 243.
2. J. M. Bloch, M. Sansone, F. Rondelez, D. G. Peiffer, P. Pincus, M. W. Kim and P. M, Eisenberger, Phys. Rev. Lett., 54, 1039 (1985). DOI: 10.1103/PhysRevLett.54.1039
3. Y. Mori, K. Shimanoe and T. Sakon, Anal. Sii, 11, 499 (1995).
4. W. Kern and D. A. Poutinen, RCA Rev., 31, 207 (1970).
5. Y. Mori and K. Shimanoe, Anal. Set, 12, 141 (1996).
6. M. Hourai, T. Naridomi, Y. Oka, K. Murakami, S. Sumita, N. Fujino and T. Shirakawa, Jpn. J. Appl. Phys., 27, L2361 (1988). DOI: 10.1143/JJAP.27.L2361
7. U. Weisbrod, R. Gutschke, J. Knoth and H. Schwenke, Fresenius“ J. Anal. Chem., 341, 83 (1991). DOI: 10.1007/BF00322113
8. Y. Mori, K. Uemura, K. Shimanoe and T. Sakon, J. Electrochem. Soc, 142, 3104 (1995). DOI: 10.1149/1.2048696