Low temperature synthesis of single-walled carbon nanotubes in an inductively coupled plasma chemical vapor deposition system

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 5, 2008, Pages 2526-2533

  Weng, Cheng Hui ^a   Yang, Chao Shun ^a   Lint, Hsuan ^a,b   Tsai, Chuen Horng ^a   Leou, Keh Chyang ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Bi layered dry catalysts; Low temperature; Plasma enhanced chemical vapor deposition (PECVD); Single walled carbon nanotubes

Indexed keywords

(E ,3E) PROCESS; CHARACTERISTIC PEAKS; ELECTRON BEAM EVAPORATION (EBE); INDUCTIVELY COUPLED PLASMA (ICP); INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION (ICP-CVD); LOW SUBSTRATE TEMPERATURE; LOW TEMPERATURE (LTR); LOW-TEMPERATURE SYNTHESIS; MICRO-RAMAN SPECTRA; PARAMETRIC STUDIES; PLASMA POWERS; PLASMA-ENHANCED CVD; PRODUCTION PROCESSES; SINGLE-WALLED CARBON NANOTUBES (SWCNTS); SYNTHESIS (OF CHIRAL IONIC LIQUIDS); SYNTHESIS TEMPERATURES;

BISMUTH; CARBON FILMS; CATALYSIS; CATALYSTS; INDUCTIVELY COUPLED PLASMA; LOW TEMPERATURE EFFECTS; METALLIZING; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; PHOTORESISTS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SINGLE-WALLED CARBON NANOTUBES (SWCN); SYNTHESIS (CHEMICAL); TEMPERATURE; VAPOR DEPOSITION; VAPORS;

CARBON NANOTUBES;

EID: 45849146993     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.535     Document Type: Conference Paper

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