Selective etching of metallic single-wall carbon nanotubes with hydrogen plasma

Nanotechnology

Volumn 16, Issue 2, 2005, Pages 278-281

  Hassanien, A ^a   Tokumoto, M ^a   Umek, P ^b   Vrbanic D ^c   Mozetic M ^b   Mihailovic D ^b   Venturini, P ^d   Pejovnik, S ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JO EF STEFAN INSTITUTE   (Slovenia)

^c Askerceva 5 1000 Ljubljana S   (Slovenia)

^d NATIONAL INSTITUTE OF CHEMISTRY   (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTROPHORESIS; ETCHING; FOURIER TRANSFORMS; OXIDATION; PLASMA THEORY; RAMAN SCATTERING;

CHARGE DENSITY MODULATIONS; FUNCTIONALIZATION; GROWTH PARAMETERS; SELECTIVE SITE ETCHING;

CARBON NANOTUBES;

EID: 14044253435     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/2/017     Document Type: Article

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