Evaluation of defect repair of EUVL mask pattern using FIB-GAE method

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7028, Issue , 2008, Pages

  Amano, Tsuyoshi ^a   Nishiyama, Yasushi ^a   Shigemura, Hiroyuki ^a   Terasawa, Tsuneo ^a   Suga, Osamu ^a   Hagiwara, Ryoji ^b   Shiina, Kensuke ^b   Kikuchi, Shuichi ^b   Yasaka, Anto ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b SII NANOTECHNOLOGY INC   (Japan)

Author keywords

EUV; FIB; Gas assisted etching; Mask; Repair

Indexed keywords

COMPUTER NETWORKS; CUBIC BORON NITRIDE; ETCHING; EXTREME ULTRAVIOLET LITHOGRAPHY; FOCUSED ION BEAMS; ION BOMBARDMENT; LITHOGRAPHY; MAINTENANCE; NITRIDES; OPTICS; PHOTOMASKS; TANTALUM; TECHNOLOGY; WATER POLLUTION;

(E ,3E) PROCESS; ABSORBER LAYERS; ACCELERATION VOLTAGES; DEFECT REPAIR; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL) MASKS; MASK TECHNOLOGY; NEXT-GENERATION LITHOGRAPHY (NGL); NITRIDE LAYERS; PHOTO MASKING;

REPAIR;

EID: 45549095915     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.793071     Document Type: Conference Paper

References (13)

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