Investigation of resist effects on EUV mask defect printability

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6730, Issue , 2007, Pages

  Zhang, Zhiyu ^a   Liang, Ted ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Defect printability; EUV lithography; Resist

Indexed keywords

DEFECT PRINTABILITY; MASK ERROR ENHANCEMENT FACTOR (MEEF); MICRO EXPOSURE TOOLS (MET);

DEFECTS; EXTREME ULTRAVIOLET LITHOGRAPHY; IMAGE QUALITY; PHOTORESISTS; PRINTED CIRCUITS;

MASKS;

EID: 42149118583     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.746707     Document Type: Conference Paper

References (9)

1. T. Liang, G. Zhang, P. Naulleau, A. Myers, S. Park, A. Stivers and G. Vandentop, "EUV mask pattern defect printability", Proc. SPIE Vol. 6263, 62830K, (2006)
2. T. Liang, P. Sanchez, G. Zhang, E. Shu, R. Nagpal, and A. Stivers, "Understanding and reduction of defects on finished EVU mask", Proc. SPIE Vol. 5752, 654 (2005)
3. T. Liang, A. Stivers, P. Yan, E. Tejnil and G. Zhang, "Enhanced optical inspectability of patterned EUVL mask", Proc. SPIE Vol. 4562, 288, (2002)
4. S. Lee and Z. Zhang, "Process window study with various illuminations for EUV lithography applications", Proc. SPIE Vol 6517, 65172P, (2007)
5. S. Lee et al., "Lithographic evaluation of the EUV engineering test stand", Proc. SPIE Vol. 4688, 266 (2002)
6. A. Wong, A. Ferguson, and S. Mansfield, "The Mask Error Factor in Optical Lithography", IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, Vol. 13, (2000)
7. F.M. Schellenberg and C. Mack, "MEEF in theory and practice", Proc. SPIE Vol. 3873, 189, (1999)
8. C. Mack, "Analytic approach to understanding the impact of mask errors on optical lithography", Proc. SPIE Vol. 4000, 215, (2000)
9. CA. Mack, et al, "Lumped Parameter Model of the Photolithographic Process," In Proc. Kodak Microelectronics Seminar, pp. 228-238, 1986