Evaluation of dry etching and defect repair of EUVL mask absorber layer

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5567, Issue PART 2, 2004, Pages 1435-1444

  Abe, Tsukasa ^a   Nishiguchi, Masaharu ^a   Amano, Tsuyoshi ^a   Motonaga, Toshiaki ^a   Sasaki, Shiho ^a   Mohri, Hiroshi ^a   Hayashi, Naoya ^a   Tanaka, Yuusuke ^b   Nishiyama, Iwao ^b  

^a DAI NIPPON PRINTING CO LTD   (Japan)

^b ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Absorber layer; Afm; Buffer layer; Dry etching; EUVL; FIB; GAE; Mask

Indexed keywords

ATOMIC FORCE MICROSCOPY; DRY ETCHING; ELECTRON BEAMS; ION BEAMS; MASKS; PLASMA APPLICATIONS; SCANNING ELECTRON MICROSCOPY; TANTALUM COMPOUNDS; ULTRAVIOLET RADIATION;

ABSORBER LAYERS; ATOMIC FORCE MICROSCOPY (AFM); BUFFER LAYERS; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); FOCUSED ION BEAMS (FIB);

LITHOGRAPHY;

EID: 19844365082     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.569397     Document Type: Conference Paper

References (3)

1. nd International EUVL Symposium
2. Y. Iba, H. Kumasaka, T. Iizuka and M. Yamabe, jpn. J. Appl. Phys. 39,5329 (2000)
3. T. Shoki, M. Hosoya, T. Kinoshita, H. Kobayashi, Y. Usui, R. Ohkubo, S Ishibashi and O. Nakarekawa, Proc. SPIE 4754, 857(2002)