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Volumn 44, Issue 9-11 SPEC. ISS., 2004, Pages 1663-1668

Testing of ultra low voltage VLSI chips using the superconducting single-photon detector (SSPD)

Author keywords

[No Author keywords available]

Indexed keywords

BUILT-IN SELF TEST; ELECTRIC FIELDS; ELECTRIC NETWORK ANALYSIS; FIELD EFFECT TRANSISTORS; INFRARED RADIATION; LIGHT EMISSION; MICROPROCESSOR CHIPS; PHOTOMULTIPLIERS; PHOTONS;

EID: 4544322721     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.07.050     Document Type: Conference Paper
Times cited : (15)

References (17)
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    • S. Polonsky, A. Weger and M.K. McManus, "Picosecond Imaging Circuit Analysis of Leakage Currents in CMOS Circuits", ISTFA, 2002.
    • (2002) ISTFA
    • Polonsky, S.1    Weger, A.2    McManus, M.K.3
  • 5
    • 1542270257 scopus 로고    scopus 로고
    • Circuit voltage probe based on time-integrated measurements of optical emission from leakage current
    • F. Stellari, et al., "Circuit voltage probe based on time-integrated measurements of optical emission from leakage current", ISTFA, 2002, pp. 67-672.
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  • 6
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    • Weger, A.1
  • 8
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    • Backside infrared probing for static voltage drop and dynamic timing measurements
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    • Rusu, S.1
  • 9
    • 0344465800 scopus 로고    scopus 로고
    • Hot carrier emission from 50 nm n-and p-channel MOSFET devices
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  • 10
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    • Simultaneous subnanosecond timing information and 2D spatial information from imaging photomultiplier tubes
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  • 13
    • 0036289401 scopus 로고    scopus 로고
    • The circuit and physical design of POWER4 microprocessor
    • J.D. Warnock, et al., "The Circuit and Physical Design of POWER4 Microprocessor", IBM J. Research and Develop., vol. 46, no. 1, 2002, pp. 27-49.
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  • 14
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    • Comparison of laser and emission based optical probe techniques
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  • 15
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.