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Volumn 2, Issue , 2003, Pages 740-741

Hot carrier emission from 50 nm n- and p-Channel MOSFET devices

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED RADIATION; INTEGRATED CIRCUITS; MAXWELL EQUATIONS; MONOCHROMATORS; MOSFET DEVICES; SPECTRUM ANALYSIS;

EID: 0344465800     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (18)

References (7)
  • 2
    • 0034225231 scopus 로고    scopus 로고
    • Picosecond imaging circuit analysis
    • J. Tsang, J. Kash, D. Vallett. "Picosecond Imaging Circuit Analysis" IBM J. Res. Develop., 44(4),2000 pp. 583-603.
    • (2000) IBM J. Res. Develop. , vol.44 , Issue.4 , pp. 583-603
    • Tsang, J.1    Kash, J.2    Vallett, D.3
  • 6
    • 0035456838 scopus 로고    scopus 로고
    • Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies
    • J. C. Tsang and M. V. Fischetti. "Why Hot Carrier Emission Based Timing Probes Will Work for 50 nm, 1V CMOS Technologies". Microelectronics Reliability. 41. 2001. 1465-1470.
    • (2001) Microelectronics Reliability , vol.41 , pp. 1465-1470
    • Tsang, J.C.1    Fischetti, M.V.2
  • 7
    • 0000805233 scopus 로고    scopus 로고
    • Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability
    • M. V. Fischetti and S. E. Laux. "Long-range Coulomb Interactions in Small Si Devices. Part I: Performance and Reliability". J. Applied Physics. Vol. 89, No. 2 2001. p.1205-1231.
    • (2001) J. Applied Physics , vol.89 , Issue.2 , pp. 1205-1231
    • Fischetti, M.V.1    Laux, S.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.