Real-time monitoring of oxidation processes on Si(0 0 1) surface using O2 gas under 1000 K by synchrotron radiation photoemission spectroscopy

Surface Science

Volumn 566-568, Issue 1-3 PART 2, 2004, Pages 1124-1129

  Yoshigoe, Akitaka ^a   Moritani, Kousuke ^a   Teraoka, Yuden ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Growth; Oxidation; Oxygen; Silicon; Surface electronic phenomena (work function, surface potential, surface states, etc.); Synchrotron radiation photoelectron spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; MOSFET DEVICES; OXIDATION; OXYGEN; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SYNCHROTRON RADIATION;

PHOTOEMISSION SPECTOSCOPY; SURFACE ELECTRONIC PHENOMENA; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY; ULTRA LARGE-SCALE-INTEGRATED (ULSI) DEVICES;

SILICON;

EID: 4544238266     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.06.069     Document Type: Article

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